Image sensor

ABSTRACT

An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

This application is a divisional application of co-pending applicationSer. No. 15/394,712, filed on Dec. 29, 2016, which is acontinuation-in-part application of application Ser. No. 14/983,445,filed on Dec. 29, 2015. The prior application Ser. No. 15/394,712 claimsthe benefit of Taiwan application

No.104144278, filed on Dec. 29, 2015, and the benefit of Taiwanapplication Ser. No. 105137886, filed on Nov. 18, 2016. The subjectmatters of which are incorporated herein by references.

TECHNICAL FIELD

The present disclosure relates to an image sensor and a manufacturingmethod thereof.

BACKGROUND

In years, researchers in related fields have been emphasizing ondeveloping highly photo-sensitive sensing components, in order toprovide CMOS image sensors having sensitive performance under dark lightenvironments.

However, photo sensing components are usually made of silicon materials,and the pixel numbers have been greatly increased in order to increaseresolution while maintaining the same chip area, thereby continuouslydecreasing the pixel sizes and decreasing the amount of lights as wellas the light collection area. Due to the restriction of the amount oflights and the light collection area of sensing components, even withthe continuous progress of semiconductor manufacturing processes, thepixel areas of sensing components still cannot be further reduced, thepixel numbers still cannot be further increased, and thus the resolutionof image sensing chips cannot be further increased as well. Therefore,how to increase the amount of lights and the light conversion efficiencyhave been the current research and development focus of current imagesensing components.

SUMMARY

One exemplary embodiment of the present disclosure relates to an imagesensor. The image sensor includes a pixel sensing circuit, a pixelelectrode, and an opto-electrical conversion layer. The pixel sensingcircuit is corresponding to a pixel region. The pixel electrode isdisposed on the pixel sensing circuit. The pixel electrode iscorresponding to a first pixel region and a second pixel region, thepixel electrode include a first electrode and a second electrode and iselectrically connected to the pixel sensing circuit. The first electrodeand the second electrode are coplanar and have different polarities. Thefirst electrode or the second electrode located in the first pixelregion is adjacent to the first electrode or the second electrode havingthe same polarity located in the second pixel region. Theopto-electrical conversion layer is disposed on the pixel sensingcircuit and the pixel electrode. The opto-electrical conversion layerincludes a carrier transport layer and a photo sensing layer disposed onthe carrier transport layer, and the carrier transport layer is locatedbetween the pixel electrode and the photo sensing layer.

Another exemplary embodiment of the present disclosure relates to animage sensor. The image sensor includes a pixel sensing circuit, a pixelisolation structure, a pixel electrode, and an opto-electricalconversion layer. The pixel isolation structure is disposed on the pixelsensing circuit. The pixel electrode includes a first electrode and asecond electrode, and the first electrode and the second electrode areelectrically connected to the pixel sensing circuit. The first electrodeand the second electrode are coplanar. The opto-electrical conversionlayer is disposed on the pixel sensing circuit, and the opto-electricalconversion layer is disposed within the pixel isolation structure. A topsurface of the opto-electrical conversion layer is below or equal to atop surface of the pixel isolation structure.

Another exemplary embodiment of the present disclosure relates to animage sensor. The image sensor includes a pixel sensing circuit, a pixelelectrode, and an opto-electrical conversion layer. The pixel sensingcircuit is corresponding to a plurality of pixel regions. The pixelelectrode is disposed on the pixel sensing circuit. The pixel electrodeincludes a first electrode and a second electrode and is electricallyconnected to the pixel sensing circuit. The first electrode and thesecond electrode are coplanar, and have different polarities. The optoelectrical conversion layer is disposed on the pixel sensing circuit.The opto-electrical conversion layer includes a plurality ofopto-electrical conversion portions, each of the opto-electricalconversion portions is corresponding to each of the pixel regions, andthe opto-electrical conversion portions are separated from each other bya pixel isolation trench.

Another exemplary embodiment of the present disclosure relates to amanufacturing method of an image sensor. The manufacturing method of theimage sensor includes the following steps: providing a pixel sensingcircuit, the pixel sensing circuit corresponding to a plurality of pixelregions; disposing a pixel electrode on the pixel sensing circuit, thepixel electrode including a first electrode and a second electrode andelectrically connected to the pixel sensing circuit, wherein the firstelectrode and the second electrode are coplanar and have differentpolarities; and disposing an opto-electrical conversion layer on thepixel sensing circuit, wherein the opto-electrical conversion layerincludes a plurality of opto-electrical conversion portions, each of theopto-electrical conversion portions is corresponding to each of thepixel regions, and the opto-electrical conversion portions are separatedfrom each other by a pixel isolation trench.

The following description is made with reference to the accompanyingdrawings and embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top view of an image sensor according to an embodiment ofthe present disclosure;

FIG. 1B is a cross-sectional view along the cross-section line 1B-1B′ inFIG. 1A;

FIG. 2A is a schematic view of an image sensor according to anotherembodiment of the present disclosure;

FIG. 2B is a schematic view of an image sensor according to anotherembodiment of the present disclosure;

FIG. 3A is a top view of an image sensor according to an additionalembodiment of the present disclosure;

FIG. 3B is a cross-sectional view along the cross-section line 3B-3B′ inFIG. 3A;

FIG. 4A is a top view of an image sensor according to a furtherembodiment of the present disclosure;

FIG. 4B is a cross-sectional view along the cross-section line 4B-4B′ inFIG. 4A;

FIGS. 4C-4E are cross-sectional views along the cross-section line4B-4B′ according to some embodiments;

FIG. 5 is a schematic view of an image sensor according to a stillfurther embodiment of the present disclosure;

FIG. 6 is a schematic view of an image sensor according to anotherfurther embodiment of the present disclosure;

FIG. 7 is a top view of an image sensor according to an additionalfurther embodiment of the present disclosure;

FIG. 8 is a top view of an image sensor according to another additionalfurther embodiment of the present disclosure;

FIG. 9 is a top view of an image sensor according to a still furtheradditional embodiment of the present disclosure;

FIG. 9A is a top view of an image sensor according to a still furtheradditional embodiment of the present disclosure;

FIGS. 10A-10D show a manufacturing process of an image sensor accordingto an embodiment of the present disclosure;

FIGS. 11A-11C show a manufacturing process of an image sensor accordingto another embodiment of the present disclosure;

FIG. 12 shows a cross-sectional view of an image sensor according to astill further embodiment of the present disclosure;

FIGS. 12A-12B show cross-sectional views of an image sensor according toa some further embodiments of the present disclosure; and

FIGS. 13A-13F show a manufacturing process of an image sensor accordingto a still further embodiment of the present disclosure.

DETAILED DESCRIPTION

Below, exemplary embodiments will be described in detail with referenceto accompanying drawings so as to be easily realized by a person havingordinary knowledge in the art. The inventive concept may be embodied invarious forms without being limited to the exemplary embodiments setforth herein. Descriptions of well-known parts are omitted for clarity,and like reference numerals refer to like elements throughout.

In the embodiments of the present disclosure, in the image sensor, a topsurface of the opto-electrical conversion layer is below or equal to atop surface of the pixel isolation structure, such that the as-formedopto-electrical conversion layer could be isolated within a pixel regionby the pixel isolation structure due to the height difference of the twotop surfaces; accordingly, issues of occurrence of crosstalk caused bythe opto-electrical conversion layer in adjacent pixel regions could beprevented. Details of embodiments of the present disclosure aredescribed hereinafter with accompanying drawings.

Specific structures and compositions disclosed in the embodiments arefor examples and for explaining the disclosure only and are not to beconstrued as limitations. A person having ordinary skill in the art maymodify or change corresponding structures and compositions of theembodiments according to actual applications.

FIG. 1A is a top view of an image sensor according to an embodiment ofthe present disclosure, and FIG. 1B is a cross-sectional view along thecross-section line 1B-1B′ in FIG. 1A. As shown in FIGS. 1A-1B, the imagesensor 10 includes a pixel sensing circuit 100, a pixel electrode (e.g.210, 220), an opto-electrical conversion layer 300, and a water-oxygenbarrier film 400. The pixel sensing circuit 100 is corresponding to atleast a first pixel region P1 and a second pixel region P2 adjacent toeach other. The pixel electrode is disposed on the pixel sensing circuit100. The pixel electrode is corresponding to the first pixel region P1and the second pixel region P2, the pixel electrode includes a firstelectrode 210 and a second electrode 220, and the pixel electrode iselectrically connected to the pixel sensing circuit 100. The firstelectrode 210 and the second electrode 220 are coplanar and havedifferent polarities. The first electrode 210 or the second electrode220 located in the first pixel region P1 is adjacent to the firstelectrode 210 or the second electrode 220 having the same polaritylocated in the second pixel region P2. The opto-electrical conversionlayer 300 is disposed on the pixel sensing circuit 100 and the pixelelectrode. The opto-electrical conversion layer 300 includes a photosensing layer 310 and a carrier transport layer 320, the photo sensinglayer 310 is disposed on the carrier transport layer 320, and thecarrier transport layer 320 is located between the pixel electrode (thefirst electrode 210 and the second electrode 22) and the photo sensinglayer 310. A bottom surface of the pixel electrode is aligned with orunder a bottom surface of the opto-electrical conversion layer 300.

In the opto-electrical conversion layer 300, the photo sensing layer 310absorbs photons and generates excitons, and the excitons dissociate intoelectrons and holes. Under the influence of electrical fields, theelectrons and the holes move respectively toward two poles forming optocurrents. In actual operational conditions, the generation of electricalfields may come from electrodes, differences in energy levels ofopto-electrical conversion layer 300 or the applied operationalvoltages. In the embodiment, the carrier transport layer 320 may be anelectron transport layer (ETL) or a hole transport layer (HTL),providing with functions of enhancing separations of excitons andtransporting carriers, and thus the overall opto-electrical conversionefficiency of the opto-electrical conversion layer 300 could beincreased. In addition, the carrier transport layer 320 also may havefunctions of a carrier barrier layer. In other words, back-flows ofcarriers from the electrodes toward the opto-electrical conversion layer300 could be stopped, and thus the dark current could be effectivelyinhibited; or the carrier transport layer 320 may prevent theinteractions at the interface between the photo sensing layer 310 andthe electrode, thereby the stability of electrodes could be improved.

In the embodiment, the material of the carrier transport layer 320includes titanium dioxide (TiO₂), zinc oxide (ZnO), aluminum oxide(Al₂O₃), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM),poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS),nickel oxide (NiO) and/or vanadium oxide (V₂O₅), poly [(9, 9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluore ne)](PFN), ethoxyl polyethylene imine(PEIE), PEI, molybdenum trioxide(MoO₃), tungsten trioxide (WO₃), lithium fluoride (LiF),bathophenanthroline (bphen), or Tris-(8-hydroxyquinoline)aluminum(Alq3), but not limited thereto.

Since the generation of electrical fields may come from electrodes,differences in energy levels of opto-electrical conversion layer 300 orthe applied operational voltages, and the electrons and holes may beinfluenced by the electrical fields and form opto currents, when thecarrier transport layer 320 is used as a carrier barrier layer, suitablematerials can be selected through matching of energy levels, such thatdark current can be effectively reduced without sacrificing too muchopto-electrical conversion efficiency.

In an embodiment, an energy barrier formed between the carrier transportlayer 320 and the pixel electrode is such as larger than an operationalvoltage of the image sensor. For example, the energy barrier formedbetween the carrier transport layer 320 and the pixel electrode is suchas larger than the operational voltage of about 0.3 eV of the imagesensor. As such, the electrons or holes when applied with an operationalvoltage can be prevented from having enough energy to across the energybarrier to create dark currents.

For example, the carrier transport layer 320 used as a carrier barrierlayer may include the following three types of barrier layers: (1). anelectron/hole barrier layer, of which the material may be1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBI),tris(4-carbazoyl-9-ylphenyl)amine (TCTA), or the combination; (2). ahole barrier layer, of which the material may be TiO₂, ZnO or thecombination; and (3). an electron barrier layer, of which the materialmay be PFN, MoO₃, N,N′-Bis-(1-naphthalenyl)-N,N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB), or any combination ofthe above. The above material can match, for example, a pixel electrodemade of aluminum with work function of about 4.2 eV and a photo sensinglayer made of perovskite with HOMO of about 5.45 eV and LUMO of about3.95 eV.

In the embodiment, the material of the first electrodes 210 is such asdifferent from the material of the second electrodes 220. By matchingthe different work functions of different electrode materials to theenergy levels of the opto-electrical conversion layer 300, theconversion efficiency of the opto-electrical conversion layer 300 couldbe further increased, and the dark currents could be inhibited. In someembodiments, the material of the first electrodes 210 and the materialof the second electrodes 220 may respectively include aluminum (Al),gold (Au), silver (Ag), titanium (Ti), nickel (Ni), copper (Cu),tantalum (Ta), tungsten (W), titanium nitride (TiN), an alloy of theaforementioned metals, and/or Al capped with or cladded with TiN, oranother metal which is compatible with a semiconductor manufacturingprocess.

In the embodiment, in the opto-electrical conversion layer 300, amodification layer (not shown in drawings) may be located on the photosensing layer 310 for reducing defects on the surface of the photosensing layer or defects among grains. The material of the modificationlayer may be fullerene derivative (PCBM) or other materials of functionas reducing dangling bond.

FIG. 2A is a schematic view of an image sensor according to anotherembodiment of the present disclosure. The elements in the presentembodiment sharing the same or similar labels with those in the previousembodiments are the same or similar elements, and the description ofwhich is omitted.

As shown in FIG. 2A, the image sensor 20-1 includes a pixel sensingcircuit 100, a pixel electrode (the first electrode 210 and the secondelectrode 220), a pixel isolation structure 200, and an opto-electricalconversion layer 300. The pixel isolation structure 200 is disposed onthe pixel sensing circuit 100. In the embodiment, the pixel electrode iselectrically connected to the pixel sensing circuit 100 and includes afirst electrode 210 and a second electrode 220. The opto-electricalconversion layer 300 is disposed on the pixel sensing circuit 100, theopto-electrical conversion layer 300 is located within the pixelisolation structure 200, and a top surface 300 a of the opto-electricalconversion layer 300 is below a top surface 200 a of the pixel isolationstructure 200.

In the embodiment, as shown in FIG. 2A, a height difference ΔH betweenthe top surface 300 a of the opto-electrical conversion layer 300 andthe top surface 200 a of the pixel isolation structure 200 is such aslarger than 0, which may be adjusted according to various manufacturingprocesses. For example, in an embodiment, the height difference ΔH maybe such as larger than or equal to 0.1 μm. In some embodiments, theheight of the opto-electrical conversion layer 300 is such as 0.2-0.5μm, and the height of the pixel isolation structure 200 is such aslarger than 0.2 μm. In some other embodiments, the top surface 300 a ofthe opto-electrical conversion layer 300 may be substantially alignedwith the top surface 200 a of the pixel isolation structure 200 (notshown in drawings), and the height difference ΔH is such as equal to 0(that is, the top surface 300 a of the opto-electrical conversion layer300 is substantially equal to the top surface 200 a of the pixelisolation structure 200, and there is no height difference).

In the embodiment, the top surface 300 a of the opto-electricalconversion layer 300 is below the top surface 200 a of the pixelisolation structure 200, such that the as-formed opto-electricalconversion layer 300 could be naturally isolated within a pixel regionby the pixel isolation structure 200 due to the height difference ΔH;accordingly, issues of occurrence of crosstalk caused by theopto-electrical conversion layer 300 in adjacent pixel regions could beprevented.

As shown in FIG. 2A, the first electrode 210 and the second electrode220 are both disposed on the pixel sensing circuit 100 and are coplanar.In comparison to the conventional design of stacking two electrodesvertically, the single-layered electrode design of the first electrode210 and the second electrode 220 may further increase the amount ofreceiving lights.

In the embodiment, the material of the first electrode 210 and thematerial of the second electrode 220 may be the same or different. Inthe embodiment, the material of the first electrode 210 and the materialof the second electrode 200 may respectively include aluminum (Al), gold(Au), silver (Ag), titanium (Ti), nickel (Ni), copper (Cu), tantalum(Ta), tungsten (W), titanium nitride (TiN), and/or Al capped with orcladded with TiN, or other metal which is compatible with asemiconductor manufacturing process, but not limited thereto.

In some embodiments, the opto-electrical conversion layer 300 mayinclude an organic material of an inorganic-organic composite material,for example, a quantum dot material, a single crystal methyl ammoniumlead iodide perovskite material, a poly crystal methyl ammonium leadiodide perovskite material, an amorphous methyl ammonium lead iodideperovskite material, or a single crystal, poly crystal, or amorphousmethyl ammonium lead iodide chloride perovskite material. For example,the quantum dot material may be a quantum dot film, the methyl ammoniumlead iodide perovskite material may be methyl ammonium lead tri-iodideperovskite (CH₃NH₃Pbl₃), and the methyl ammonium lead iodide chlorideperovskite material may be methyl ammonium lead di-iodide chlorideperovskite (CH₃NH₃Pbl₂Cl) or methyl ammonium lead iodide chlorideperovskite (CH₃NH₃Pbl_(3-x)Cl_(x)).

As shown in FIG. 2A, in the embodiment, the image sensor 20-1 mayfurther include a water-oxygen barrier film 400 (or a water barrierfilm). The water-oxygen barrier film 400 (or the water barrier film)covers the pixel sensing circuit 100, the pixel isolation structure 200,and the opto-electrical conversion layer 300. In the embodiment as shownin FIG. 2A, the bottom surface of the pixel electrode (the firstelectrode 210 and the second electrode 220) is aligned with the bottomsurface of the opto-electrical conversion layer 300.

FIG. 2B is a schematic view of an image sensor according to anotherembodiment of the present disclosure. The elements in the presentembodiment sharing the same or similar labels with those in the previousembodiments are the same or similar elements, and the description ofwhich is omitted. The present embodiment is different from theembodiment as shown in FIG. 2A mainly in the design of theopto-electrical conversion layer 300.

Please refer to FIG. 2B. In the image sensor 20-2, the opto-electricalconversion layer 300 may include a photo sensing layer 310 and a carriertransport layer 320. The carrier transport layer 320 is disposed betweenthe pixel electrode (the first electrode 210 and the second electrode220) and the photo sensing layer 310. In the embodiment as shown in FIG.2B, the bottom surface of the pixel electrode (the first electrode 210and the second electrode 220) is aligned with the bottom surface of theopto-electrical conversion layer 300. In the embodiment, the carriertransport layer 320 may be such as an electron transport layer (ETL) ora hole transport layer (HTL), providing with functions of enhancingseparations of excitons and transporting carriers, and thus the overallopto-electrical conversion efficiency of the opto-electrical conversionlayer 300 could be increased. In addition, the carrier transport layer320 also has functions of a carrier barrier layer, such that back-flowsof carriers from the electrodes toward the opto-electrical conversionlayer 300 could be stopped, and thus the dark current could beeffectively inhibited, and the stability of electrodes could beimproved.

In the present embodiment, as shown in FIG. 2B, the top surface of thecarrier transport layer 320 may be below the top surface 200 a of thepixel isolation structure 200.

In the embodiment, the material of the carrier transport layer 320 mayinclude such as titanium dioxide (TiO₂), zinc oxide (ZnO), aluminumoxide (Al₂O₃), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM),polystyrene sulfonate (PEDOT:PSS), nickel oxide (NiO) and/or vanadiumoxide (V₂O₅),poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)](PFN), ethoxy) polyethylene imine(PEIE), PEI, molybdenum trioxide(MoO₃), tungsten trioxide (WO₃), lithium fluoride (LiF),bathophenanthroline (bphen), or Tris-(8-hydroxyquinoline)aluminum(Alq3).

FIG. 3A is a top view of an image sensor according to an additionalembodiment of the present disclosure, and FIG. 3B is a cross-sectionalview along the cross-section line 3B-3B′ in FIG. 3A. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted. The present embodiment is differentfrom the embodiment as shown in FIG. 2A mainly in the design that thepixel isolation structure 200 defines multiple pixel regions.

As shown in FIGS. 3A-3B, in the image sensor 30, the pixel isolationstructure 200 defines a plurality of pixel regions, for example, thepixel region P1 and the pixel region P2 as shown in FIGS. 3A-3B. Theopto-electrical conversion layer 300 has a plurality of opto-electricalconversion portions separated from one another, for example, theopto-electrical conversion portions 300-1 and 300-2 as shown in FIGS.3A-3B. Each of the opto-electrical conversion portions is disposedcorresponding to each of the pixel regions; for example, theopto-electrical conversion portion 300-1 is disposed corresponding tothe pixel region P1, the opto-electrical conversion portion 300-2 isdisposed corresponding to the pixel region P2, and the opto-electricalconversion portion 300-1 is separated from the opto-electricalconversion portion 300-2.

As shown in FIGS. 3A-3B, in the image sensor 30, the first electrode 210is located in the middle of an opto-electrical conversion portion, andthe second electrode 220 surrounds each of the opto-electricalconversion portions and defines each of the pixel regions. In theembodiment as shown in FIG. 3A, the second electrode 220 fully surroundsone opto-electrical conversion portion. In some other embodiments, thesecond electrode 220 may have small openings (not shown in drawings).When the opto-electrical conversion layer is made by a wet manufacturingprocess, the small openings allow the material of the opto-electricalconversion layer to flow to the second electrode located at other pixelregion(s); accordingly, the opto-electrical conversion layer could beformed with equal heights in multiple pixel regions.

FIG. 4A is a top view of an image sensor according to a furtherembodiment of the present disclosure, FIG. 4B is a cross-sectional viewalong the cross-section line 4B-4B′ in FIG. 4A, and FIGS. 4C-4E arecross-sectional views along the cross-section line 4B-4B′ according tosome embodiments. The elements in the present embodiment sharing thesame or similar labels with those in the previous embodiments are thesame or similar elements, and the description of which is omitted. Thepresent embodiment is different from the embodiment as shown in FIGS.3A-3B mainly in the design of the pixel isolation structure 200.

As shown in FIGS. 4A-4B, in the image sensor 40, the pixel isolationstructure 200 may further include a plurality of non-conductive layers230. The pixel isolation structure 200 (e.g. the non-conductive layer230) is located on the first electrode 210 and the second electrode 220.

As shown in FIGS. 4A-4B, the top surface 200 a of the pixel isolationstructure 200 is the top surfaces 230 a of the non-conductive layers230.

Therefore, the height difference ΔH between the top surface 200 a of thepixel isolation structure 200 and the top surface 300 a of theopto-electrical conversion layer 300 is the height difference betweenthe top surfaces 230 a of the non-conductive layers 230 and the topsurface 300 a of the opto-electrical conversion layer 300. In theembodiment as shown in FIGS. 4A-4B, the pixel isolation structure 200(e.g. the non-conductive layer 230) is located on the first electrode210 and the second electrode 220. In the embodiment, the material of thenon-conductive layers 230 is such as silicon nitride or silicon oxide,and the opto-electrical conversion layer 300 is located between twonon-conductive layers 230.

In the embodiment as shown in FIG. 4B, a sidewall of the pixel isolationstructure 200 of the image sensor 40 is substantially aligned with thesides of the first electrode 210 and the second electrode 220. Forexample, as shown in FIG. 4B, a sidewall of the non-conductive layer 230of the image sensor 40 is substantially aligned with the sides of thefirst electrode 210 and the second electrode 220.

Please refer to FIGS. 4C-4E. In the embodiment as shown in FIG. 4C, thepixel isolation structure 200 (e.g. the non-conductive layer 230) of theimage sensor 40-2 is located on part of the top surfaces of the firstelectrode 210 and the second electrode 220 and partly exposed the topsurfaces of the first electrode 210 and the second electrode 220. In theembodiment as shown in FIG. 4D, the pixel isolation structure 200 (e.g.the non-conductive layer 230) is located on the first electrode 210 andthe second electrode 220 and a part of it extends towards where betweenthe first electrode 210 and the second electrode 220, and theopto-electrical conversion layer 300 is located on the non-conductivelayer 230, the first electrode 210 and the second electrode 220.Moreover, in the embodiment as shown in FIG. 4D, the bottom surface ofthe pixel electrode (the first electrode 210 and the second electrode220) is under the bottom surface of the opto-electrical conversion layer300 (the opto-electrical conversion portions 300-1 and 300-2).

In the embodiment as shown in FIG. 4E, the pixel isolation structure 200of the image sensor 40-4 is located between the pixel electrodes inadjacent pixel regions. For example, the pixel isolation structure 200is located between the first electrode 210 or the second electrode 220located in the first pixel region P1 and the first electrode 210 or thesecond electrode 220 having the same polarity located in the secondpixel region P2. In addition, in the embodiment as shown in FIG. 4E, thepixel isolation structure 200 is separated from the pixel electrode by agap. For example, as shown in FIG. 4E, the non-conductive layer 230 ofthe pixel isolation structure 200 is separated from the second electrode220 in the first pixel region P1 and is separated from the secondelectrode 220 in the second pixel region P2 by another gap, and theopto-electrical conversion layer 300 is further filled in the gaps.

FIG. 5 is a schematic view of an image sensor according to a stillfurther embodiment of the present disclosure. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted.

As shown in FIG. 5, in the image sensor 50, the top surface 300 a of theopto-electrical conversion layer 300 is located above the top surfacesof the first electrode 210 and the second electrode 220. In other words,the opto-electrical conversion layer 300 of the image sensor 50 islocated between two non-conductive layers 230, and the non-conductivelayers 230 are located between the first electrode 210 and the secondelectrode 220.

In the embodiment, the image sensor 50 may further include a siliconsubstrate 110, and the pixel sensing circuit 100 is located above thesilicon substrate 110. In the embodiment, the pixel sensing circuit 100may include an electronic component 120, metal layers M1-Mn, connectionvias S, amplifiers, and etc. For example, the electronic component 120may be a transistor for signal reading, the metal layers M1-Mn mayinclude electrical components such as capacitors, and the connectionvias S may be used as such as signal paths, but not limited thereto. Inthe embodiment, is the first electrode 210 and the second electrode 220are electrically connected to the pixel sensing circuit 100 through suchas a connection via. For example, the first electrode 210 and the secondelectrode 220 are electrically connected to the metal layer Mn and theelectronic component 120 of the pixel sensing circuit 100 through theconnection vias V1 and V2 respectively. In the embodiment, the pixelisolation structure 200 may further include a non-conductive layer 240.The non-conductive layers 230 are located on the non-conductive layer240. The non-conductive layer 240 is made by such as a dielectricmaterial, e.g. silicon oxide layer, and the non-conductive layers 230are used as a pixel isolation structure and are such as silicon nitridelayers.

In the embodiments as previously shown in FIGS. 3A-5, the upmost metallayer in the semiconductor manufacturing process is used as the firstelectrode 210 and the second electrode 220 (pixel electrode).

FIG. 6 is a schematic view of an image sensor according to anotherfurther embodiment of the present disclosure. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted. In the present embodiment, the secondupmost metal layer is used as the first electrode 210 and the secondelectrode 220 (pixel electrode).

As shown in FIG. 6, in the image sensor 60, the pixel isolationstructure 200 may further include a plurality of metal layers 250located above the first electrode 210 and the second electrode 220. Asshown in FIG. 6, the top surface 200 a of the pixel isolation structure200 is the top surfaces 250 a of the metal layers 250. Accordingly, theheight difference ΔH between the top surface 200 a of the pixelisolation structure 200 and the top surface 300 a of the opto-electricalconversion layer 300 is the height difference between the top surfaces250 a of the metal layers 250 and the top surface 300 a of theopto-electrical conversion layer 300. The metal layers 250 areelectrically isolated from the first electrode 210 and the secondelectrode 220. In the embodiment as shown in FIG. 6, the top surface 300a of the opto-electrical conversion layer 300 is located higher the topsurfaces of the first electrode 210 and the second electrode 220.

In some embodiments, the metal layers 250 are disposed on thenon-conductive layer 240; as such, the metal layers 250, and thenon-conductive layer 240 form the pixel isolation structure 200.

FIG. 7 is a top view of an image sensor according to an additionalfurther embodiment of the present disclosure. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted. The present embodiment is differentfrom the previous embodiments mainly in the design of arrangements ofthe first electrode 210 and the second electrode 220.

As shown in FIG. 7, in the image sensor 70, the second electrode 220defines the pixel regions P1-P4, and the opto-electrical conversionportions 300-1, 300-2, 300-3 and 300-4 are disposed respectivelycorresponding to the pixel regions P1, P2, P3, and P4. Theopto-electrical conversion portions 300-1, 300-2, 300-3 and 300-4 areseparated from one another. Each of the pixel regions is basicallyrectangular.

FIG. 8 is a top view of an image sensor according to another additionalfurther embodiment of the present disclosure. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted. The present embodiment is differentfrom the previous embodiments mainly in the design of arrangements ofthe first electrode 210 and the second electrode 220.

As shown in FIG. 8, in the image sensor 80, the second electrode 220defines the pixel regions P1-P5, and the opto-electrical conversionportions 300-1, 300-2, 300-3, 300-4 and 300-5 are disposed respectivelycorresponding to the pixel regions P1, P2, P3, P4, and P5. Theopto-electrical conversion portions 300-1, 300-2, 300-3, 300-4 and 300-5are separated from one another. Each of the pixel regions is basicallyhexagonal.

In some other embodiments, in the structures as shown in FIGS. 7-8, thesecond electrode 220 may have small openings (not shown in drawings),such that the opto-electrical conversion portions of multiple pixelregions P1, P2, P3, and etc. could be connected to one another, andthese openings may allow the material of the opto-electrical conversionlayer to flow between multiple pixel regions; accordingly, theopto-electrical conversion layer could be formed with equal heights inmultiple pixel regions.

FIG. 9 is a top view of an image sensor according to a still furtheradditional embodiment of the present disclosure. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted. The present embodiment is differentfrom the previous embodiments mainly in the design of arrangements ofthe first electrode 210, the second electrode 220 and the non-conductivelayers 230.

As shown in FIG. 9, the image sensor 90 is a 4×2 pixel region array. Thefirst electrodes 210 and the second electrodes 220 are strip electrodesarranged in parallel. In the present embodiment, the pixel isolationstructure 200 defines eight pixel regions P1, P2, P3, P4, P5, P6, P7,and P8. In each of the pixel regions, the first electrodes 210 areelectrically connected to the metal layer Mn through the connection viasC1, and the second electrodes 220 are electrically connected to themetal layer Mn through the connection vias C2. For example, the pixelsensing circuit 100 may include a plurality of metal layers, the pixelelectrode (for example, the first electrode 210) is electricallyconnected to one metal layer that is separated from the pixel electrodeby a shortest distance among the metal layers via the connection viasC1, and the pixel electrode (for example, the second electrode 220) iselectrically connected to one metal layer that is separated from thepixel electrode by a shortest distance among the metal layers via theconnection vias C2. The opto-electrical conversion layer 300 has eightopto-electrical conversion portions corresponding to the eight pixelregions P1-P8.

FIG. 9A is a top view of an image sensor according to a still furtheradditional embodiment of the present disclosure. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted. The present embodiment is differentfrom the previous embodiments mainly in the design of arrangements ofthe first electrode 210 and the second electrode 220.

In some embodiments, one of the first electrode 210 and the secondelectrode 220 surrounds the other one of the first electrode 210 and thesecond electrode 220. As shown in FIG. 9A, in the image sensor 90-1, thesecond electrode 220 defines a plurality of pixel regions P1-P2, theopto-electrical conversion potions 300-1 and 300-2 are disposedcorresponding to the pixel region P1 and the pixel region P2respectively, and the opto-electrical conversion portions 300-1 and300-2 are separated from each other.

In the embodiment, as shown in FIG. 9A, the second electrode 220surrounds the first electrode 210, thus the adjacent pixel regions areadjacent to each other with the second electrodes 220 of the pixelregions. The second electrode 220 surrounds one pixel region, such thatthe signal of a single pixel region remains in the pixel region and doesnot crosstalk to another adjacent pixel region influencing the adjacentpixel region. For example, the second electrode 220 surrounds the pixelregion P1, such that the opto current generated by light irradiation ofthe pixel region P1 is limited within the pixel region P1 and does notcrosstalk to the adjacent pixel region P2.

FIGS. 10A-10D show a manufacturing process of an image sensor (the imagesensor 20-1 as shown in FIG. 2A) according to an embodiment of thepresent disclosure. Please refer to FIGS. 2A and 10A-10D, amanufacturing process of an image sensor according to an embodiment ofthe present disclosure is described hereinafter. The elements in thepresent embodiment sharing the same or similar labels with those in theprevious embodiments are the same or similar elements, and thedescription of which is omitted.

As shown in FIG. 10A, in the beginning, a silicon substrate and a pixelsensing circuit 100 located thereon are provided.

Next, as shown in FIG. 10B, a pixel electrode and a pixel isolationstructure 200 are disposed on the pixel sensing circuit 100. As shown inFIG. 10B, the pixel electrode includes a first electrode 210 and asecond electrode 220 and is electrically connected to the pixel sensingcircuit 100. In the embodiment, the first electrode 210 and the secondelectrode 220 are manufactured on the pixel sensing circuit 100 by aprocess, such that the first electrode 210 and the second electrode 220could be made by the same process, and thus the manufacturing process issimplified.

Next, as shown in FIG. 10C, an opto-electrical conversion layer 300 isdisposed on the pixel sensing circuit 100, and the top surface 300 a ofthe opto-electrical conversion layer 300 is below the top surface 200 aof the pixel isolation structure 200. In the embodiment, theopto-electrical conversion layer 300 is manufactured on the pixelsensing circuit 100 by a coating process or a vapor deposition process.The as-formed opto-electrical conversion layer 300 could be naturallyisolated within a pixel region by the pixel isolation structure 200 dueto the height difference ΔH between the top surface 200 a and the topsurface 300 a; accordingly, issues of occurrence of crosstalk caused bythe opto-electrical conversion layer 300 in adjacent pixel regions couldbe prevented.

Next, as shown in FIG. 10D, a water-oxygen barrier film 400 is formed.The water-oxygen barrier film 400 covers the pixel sensing circuit 100,the pixel isolation structure 200, and the opto-electrical conversionlayer 300. As such, the manufacturing of the image sensor 20-1 as shownin FIG. 10D (FIG. 2A) is completed.

Manufacturing processes of the image sensors 20-2 to 90 as illustratedin FIGS. 2B to 9 are respectively described hereinafter according to themanufacturing process of the image sensor 20-1 described in the previousembodiment.

The manufacturing process of the image sensor 20-2 as shown in FIG. 2Bis different from the previous embodiment mainly in the design of theopto-electrical conversion layer 300. In the present embodiment, acarrier transport layer 320 is formed on the pixel isolation structure200 prior to forming the photo sensing layer 310, and then the photosensing layer 310 is formed on the carrier transport layer 320, suchthat the opto-electrical conversion layer 300 is formed.

FIGS. 11A-11C show a manufacturing process of an image sensor (the imagesensor 30 as shown in FIGS. 3A-3B) according to another embodiment ofthe present disclosure. The manufacturing process of the image sensor 30as shown in FIGS. 3A-3B is different from the embodiment previouslyillustrated in FIG. 2A mainly in that the as-formed pixel isolationstructure 200 has a different structure. In other words, a pattern whichis predetermined according to the pixel isolation structure 200 of theimage sensor 30 is applied to perform the patterning process of thepixel isolation structure 200.

Specifically speaking, as shown in FIG. 11A, a silicon substrate and apixel sensing circuit 100 located thereon are provided. Next, as shownin FIG. 11B, a pixel isolation structure 200 is disposed on the pixelsensing circuit 100. The pixel isolation structure 200 defines multiplepixel regions, such as the pixel regions P1 and P2.

Next, as shown in FIG. 11C, an opto-electrical conversion layer 300 isformed on the pixel sensing circuit 100 by a coating process or a vapordeposition process. Due to the height difference ΔH between the topsurface 200 a and the top surface 300 a, the as-formed opto-electricalconversion layer 300 could be naturally separated by the pixel isolationstructure 200 and form multiple opto-electrical conversion portions,which are separated from one another, in multiple pixel regions;accordingly, issues of occurrence of crosstalk caused by theopto-electrical conversion portions of the opto-electrical conversionlayer 300 in adjacent pixel regions could be prevented. As such, themanufacturing of the image sensor 30 as shown in FIG. 11A (FIGS. 3A-3B)is completed.

The manufacturing process of the image sensor 40 as shown in FIGS. 4A-4Bis different from the previous embodiment as shown in FIGS. 3A-3B mainlyin that the pixel isolation structure 200 has a different structure. Inother words, a pattern which is predetermined according to the firstelectrode 210 and the second electrode 220 of the image sensor 40 isapplied to perform the patterning process of the pixel isolationstructure 200, followed by the formation of non-conductive layers 230 onthe first electrode 210 and the second electrode 220.

Specifically speaking, in the present embodiment, the first electrode210 and the second electrode 220 are formed on the pixel sensing circuit100 by a single process, and then the non-conductive layers 230 areformed on the first electrode 210 and the second electrode 220, as shownin FIGS. 4A-4B.

The manufacturing process of the image sensor 50 as shown in FIG. 5 isdifferent from the previous embodiment as shown in FIGS. 3A-3B mainly inthe as-formed opto-electrical conversion layer 300. The coated orvapor-deposited opto-electrical conversion layer 300 of the presentembodiment has a higher top surface 300 a.

In addition, in the present embodiment, the connection via V1 and V2 maybe formed on the pixel sensing circuit 100, and then the first electrode210 and the second electrode 220 are formed on the connection via V1 andV2.

The manufacturing process of the image sensor 60 as shown in FIG. 6 isdifferent from the previous embodiment as shown in FIG. 5 mainly in thatthe pixel isolation structure 200 has a different structure. In otherwords, a pattern which is predetermined according to the first electrode210 and the second electrode 220 of the image sensor 60 is applied toperform the patterning process of the pixel isolation structure 200,followed by the formation of metal layers 250 on the first electrode 210and the second electrode 220.

Specifically speaking, in the present embodiment, the first electrode210, the second electrode 220, and the non-conductive layer 240 areformed on the pixel sensing circuit 100 by a single vapor depositionprocess, and then the metal layers 250 are formed on the non-conductivelayer 240.

The manufacturing processes of the image sensors 70 and 80 as shown inFIGS. 7-8 are different from the previous embodiments mainly in that thefirst electrode 210 and the second electrode 220 have differentstructures. In other words, a pattern predetermined according to thefirst electrode 210 and the second electrode 220 of the image sensors 70and 80 is applied to perform the patterning process of the pixelisolation structure 200.

The manufacturing process of the image sensor 90 as shown in FIG. 9 isdifferent from the previous embodiments mainly in that the firstelectrode 210, the second electrode 220, and the non-conductive layers230 have different structures. In other words, a pattern which ispredetermined according to the first electrode 210 and the secondelectrode 220 of the image sensor 90 is applied to perform thepatterning process of the pixel isolation structure 200, followed by theformation of non-conductive layers 230 on the first electrode 210 andthe second electrode 220.

FIG. 12 shows a cross-sectional view of an image sensor according to astill further embodiment of the present disclosure, and FIGS. 12A-12Bshow cross-sectional views of an image sensor according to some furtherembodiments of the present disclosure. The elements in the presentembodiment sharing the same or similar labels with those in the previousembodiments are the same or similar elements, and the description ofwhich is omitted.

As shown in FIG. 12, the image sensor 1200 includes a pixel sensingcircuit 100, a pixel electrode and an opto-electrical conversion layer300. The pixel sensing circuit 100 is corresponding to a plurality ofpixel regions, for example, the pixel regions P1 and P2. The pixelelectrode is disposed on the pixel sensing circuit 100. The pixelelectrode includes a first electrode 210 and a second electrode 220 andis electrically connected to the pixel sensing circuit 100. The firstelectrode 210 and the second electrode 220 are coplanar and havedifferent polarities. The opto-electrical conversion layer 300 isdisposed on the pixel sensing circuit 100, and the opto-electricalconversion layer 300 includes a plurality of opto-electrical conversionportions, for example, the opto-electrical conversion portions 300-1 and300-2. Each of the opto-electrical conversion potions is respectivelycorresponding to each of the pixel regions, and the opto-electricalconversion portions are separated from each other by a pixel isolationtrench 300T.

In the embodiment, each of the opto-electrical conversion portions isisolated within a pixel region by the pixel isolation trench 300T, suchthat the issues of crosstalk between opto-electrical conversion layer300 (opto-electrical conversion portions) in adjacent pixel regions canbe prevented. For example, the opto-electrical conversion portion 300-1is corresponding to the pixel region P1, the opto-electrical conversionportion 300-2 is corresponding to the pixel region P2, and theopto-electrical conversion portion 300-1 and the opto-electricalconversion portion 300-2 are separated from each other by the pixelisolation trench 300T.

In the embodiment, as shown in FIG. 12, each of the opto-electricalconversion portions 300-1 and 300-2 are respectively located between thefirst electrode 210 and the second electrode 220 in each of the pixelregions P1 and P2. In the embodiment, as shown in FIG. 12, the topsurface 300 a of the opto-electrical conversion layer 300 is higher thana top surface of the pixel electrode 200.

In the embodiment, the opto-electrical conversion layer 300 may includea quantum dot material, a single crystal methyl ammonium lead iodideperovskite material, a poly crystal methyl ammonium lead iodideperovskite material, an amorphous methyl ammonium lead iodide perovskitematerial, or a single crystal, poly crystal, or amorphous methylammonium lead iodide chloride perovskite material, but not limitedthereto.

In the embodiment as shown in FIG. 12, the sidewall of the pixelisolation trench 300T of the image sensor 1200 is substantially alignedwith the sides of the first electrode 210 and the second electrode 220.

In the embodiment as shown in FIG. 12A, each of the opto-electricalconversion portions 300-1 and 300-2 covers the first electrode 210 andthe second electrode 220 in each of the corresponding pixel regions P1and P2.

In the embodiment as shown in FIG. 12B, the pixel isolation trench 300Texposes a portion of the first electrode 210 and a portion of the secondelectrode 220 of the image sensor 1200-2. For example, theopto-electrical conversion portions 300-1/300-2 corresponding to thepixel regions P1/P2 partially cover the first electrode 210 and thesecond electrode 220 for partially exposing the second electrode locatedat edges of the pixel regions P1/P2.

FIGS. 13A-13F show a manufacturing process of an image sensor (the imagesensor 1200 as shown in FIG. 12) according to a still further embodimentof the present disclosure. Please refer to FIG. 12 and FIGS. 13A-13F forthe description of the manufacturing process of an image sensoraccording to a still further embodiment of the present disclosure. Theelements in the present embodiment sharing the same or similar labelswith those in the previous embodiments are the same or similar elements,and the description of which is omitted.

As shown in FIG. 13A, a pixel sensing circuit 100 is provided, the pixelsensing circuit is corresponding to a plurality of pixel regions. Next,as shown in FIG. 13A, a pixel electrode is disposed on the pixel sensingcircuit 100. As shown in FIG. 13A, the pixel electrode includes a firstelectrode 210 and a second electrode 220 and is electrically connectedto the pixel sensing circuit. The first electrode 210 and the secondelectrode 220 are coplanar and have different polarities.

Next, as shown in FIGS. 13B-13F, an opto-electrical conversion layer 300is disposed on the pixel sensing circuit. The opto-electrical conversionlayer 300 includes a plurality of opto-electrical conversion portions,each opto-electrical conversion portions is corresponding to each of thepixel regions, and the opto-electrical conversion portions are separatedfrom each other by a pixel isolation trench 300T. The manufacturingmethod of the opto-electrical conversion layer 300 includes such as thefollowing steps.

As shown in FIG. 13B, a patterned photoresist layer PR is formed on thepixel sensing circuit 100. In the embodiment, a pattern of the patternedphotoresist layer PR is corresponding to an arrangement of the pixelregions.

As shown in FIG. 13C, a first opto-electrical conversion precursormaterial 330 is formed on the structures of the first electrode 210, thesecond electrode 220 and the patterned photoresist layer PR. In theembodiment, the first opto-electrical conversion precursor material 330is formed fully on the first electrode 210 and the second electrode 220and covers the structures of the first electrode 210, the secondelectrode 220 and the patterned photoresist layer PR. In the embodiment,the first opto-electrical conversion precursor material 300 is such asan inorganic material. In one embodiment, the first opto-electricalconversion precursor material 300 is such as Pbl₂.

As shown in FIG. 13D, the first opto-electrical conversion precursormaterial 330 is partly removed for forming a plurality of first materialportions, wherein each of the first material portions is correspondingto each of the pixel regions. For example, the first opto-electricalconversion precursor material 330 is partly removed for forming thefirst material portions 330-1 and 330-2, the first material portion330-1 is corresponding to the pixel region P1, and the first materialportion 330-2 is corresponding to the pixel region P2. In theembodiment, for example, a lift-off process may be performed to removethe patterned photoresist layer PR and the portions of the firstopto-electrical conversion precursor material 330 located on thepatterned photoresist layer PR.

As shown in FIG. 13E, a second opto-electrical conversion precursormaterial 340 is provided to react with the first portions. In theembodiment, the second opto-electrical conversion precursor material 340is such as a gas compound. In one embodiment, the second opto-electricalconversion precursor material 340 is such as methyl ammonium iodide.

Next, as shown in FIG. 13F, the opto-electrical conversion layer 300 isformed by the reaction between the second opto-electrical conversionprecursor material 340 and the first material portions. Since the secondopto-electrical conversion precursor material 340 only reacts with thefirst opto-electrical conversion precursor material 330, thus thearrangements of the patterned first material portions can be maintained,such that the opto-electrical conversion layer 300 formed by thereaction between the second opto-electrical conversion precursormaterial 340 and the first material portions can have the predeterminedpattern. The as-formed opto-electrical conversion layer 300 may includea quantum dot material, a single crystal methyl ammonium lead iodideperovskite material, a poly crystal methyl ammonium lead iodideperovskite material, an amorphous methyl ammonium lead iodide perovskitematerial, or a single crystal, poly crystal, or amorphous methylammonium lead iodide chloride perovskite material, but not limitedthereto. Next, the image sensor 1200 as shown in FIG. 12 is formed.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of thedisclosed embodiments. It is intended that the specification andexamples be considered as exemplary only, with a true scope of thedisclosure being indicated by the following claims and theirequivalents.

What is claimed is:
 1. An image sensor, comprising: a pixel sensingcircuit corresponding to a plurality of pixel regions; a pixel electrodedisposed on the pixel sensing circuit, wherein the pixel electrodecomprises a first electrode and a second electrode, and the pixelelectrode is electrically connected to the pixel sensing circuit, thefirst electrode and the second electrode are coplanar and have differentpolarities; and an opto-electrical conversion layer disposed on thepixel sensing circuit, wherein the opto-electrical conversion layercomprises a plurality of opto-electrical conversion portions, each ofthe opto-electrical conversion portions is respectively corresponding toeach of the pixel regions, and the opto-electrical conversion portionsare separated from each other by a pixel isolation trench.
 2. The imagesensor according to claim 1, wherein the opto-electrical conversionlayer is located on the pixel electrode, and a top surface of theopto-electrical conversion layer is higher than a top surface of thepixel electrode.
 3. The image sensor according to claim 1, wherein theopto-electrical conversion layer comprises a quantum dot material, asingle crystal methyl ammonium lead iodide perovskite material, a polycrystal methyl ammonium lead iodide perovskite material, an amorphousmethyl ammonium lead iodide perovskite material, or a methyl ammoniumlead iodide chloride perovskite material.
 4. The image sensor accordingto claim 1, wherein the opto-electrical conversion layer comprises acarrier transport layer and a photo sensing layer disposed on thecarrier transport layer, the carrier transport layer is located betweenthe photo sensing layer and the pixel electrode, and an energy barrierformed between the carrier transport layer and the pixel electrode islarger than an operational voltage of the image sensor.
 5. The imagesensor according to claim 1, wherein each of the opto-electricalconversion portions is respectively located between the first electrodeand the second electrode in each of the pixel regions.
 6. The imagesensor according to claim 1, wherein a sidewall of the pixel isolationtrench is substantially aligned with a side of the second electrode. 7.The image sensor according to claim 1, wherein each of theopto-electrical conversion portions covers the first electrode and thesecond electrode in each of the pixel regions.
 8. The image sensoraccording to claim 1, wherein the pixel isolation trench exposes aportion of the first electrode.